THz resonant-tunneling diodes
نویسندگان
چکیده
منابع مشابه
Fabrication of Sub-THz Oscillators Using Resonant Tunneling Diodes Integrated with Slot Antennas
We fabricated sub-THz oscillators using resonant tunneling diodes integrated with slot antennas. Oscillations at 90GHz and 136GHz were obtained for the slot antennas with the lengths of 1mm and 800μm. Theoretical calculation shows that the maximum oscillation frequency up to ~1.2THz is expected in this structure with short antenna.
متن کاملFundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay
Fundamental oscillations up to 1.08 THz with the output power of 5.5 microwatts was achieved in GalnAs/AlAs resonant tunneling diodes (RTDs) at room temperature. The graded emitter, thin barriers, and high-indium-composition transit layers were introduced to reduce the tunneling and transit delays. The first two of these structures are the same as those in RTDs oscillating at 1.04 THz reported ...
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The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include ...
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متن کاملRoom Temperature Operation of Gasb‐based Resonant Tunneling Diodes by Prewell Injection
We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...
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تاریخ انتشار 2017